2008. 9. 10 1/2 semiconductor technical data pg03dxtev tvs diode array for esd protection in portable electronics revision no : 2 protection in portable electronics applications. features h esd protection: iec 61000-4-2 level 4. milstd883c-method 3015-6:class 3 h four separate unidirectional configurations for protection h low leakage current<1 a @3volts h low capacitance h complies to usb 1.1 low speed & high speed specifications applications h cell phone handsets and accessories. h cordless phones. h personal digital assistants (pda s) h notebooks, desktopspc, & servers. h portable instrumentation. h set-top box, dvd player. h digital camera. maximum rating (ta=25 ? ) dim millimeters a a1 b1 c tesv 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 5 4 p p p5 + _ + _ + _ + _ + _ + _ + _ 1. (tvs) d1 cathode 2. common anode 3. (tvs) d2 cathode 4. (tvs) d3 cathode 5. (tvs) d4 cathode electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 20 w peak pulse current (tp=8/20 s) i pp 1.6 a operating temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 5.3 - 5.9 v reverse leakage current i r v rwm =3v - - 1 a clamping voltage v c i pp =1.6a, tp=8/20 s - - 13 v junction capacitance c j v r =0v, f=1mhz - 13 17 pf v r =3.0v, f=1mhz - 7.0 11.5 marking 123 4 5 1 2 3 4 5 ta type name lot no.
2008. 9. 10 2/2 pg03dxtev revision no : 2 non-repetitive peak pulse power vs. pulse time pulse duration t p ( s) 1 100 10 peak pulse power p p p (w) 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 capacitance c j (pf) 0 2 1 0 reverse voltage v r (v) c j - v r 345 2 4 8 6 10 12
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